24LC08BH-E/SN集成電路（IC）的存儲器規(guī)格書PDF中文資料

24LC08BH-E/SN屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的24LC08BH-E/SN存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description:

The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of only 1 μA and 1 mA, respectively. The 24XX08H also has a page write capability for up to 16 bytes of data. The 24XX08H is available in the standard 8-pin PDIP, surface mount SOIC, TSSOP, 2x3 TDFN and MSOP packages, and is also available in the 5-lead SOT-23 package. All packages are Pb-free and RoHS compliant.

Features:

? Single Supply with Operation Down to 1.7V for 24AA08H Devices, 2.5V for 24LC08BH Devices

? Low-Power CMOS Technology:

- Read current 1 mA, max.

- Standby current 1 μA, max.

? 2-Wire Serial Interface, I2C? Compatible

? Schmitt Trigger Inputs for Noise Suppression

? Output Slope Control to eliminate Ground Bounce

? 100 kHz and 400 kHz Clock Compatibility

? Page Write Time 3 ms, typical

? Self-Timed Erase/Write Cycle

? 16-Byte Page Write Buffer

? Hardware Write-Protect for Half-Array (200h-3FFh)

? ESD Protection >4,000V

? More than 1 Million Erase/Write Cycles

? Data Retention >200 years

? Factory Programming available

? Packages include 8-lead PDIP, SOIC, TSSOP, TDFN, MSOP and 5-lead SOT-23

? Pb-Free and RoHS Compliant

? Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C