24C02C集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

24C02C屬于集成電路（IC）的存儲(chǔ)器。由微芯科技股份有限公司制造生產(chǎn)的24C02C存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description:

The Microchip Technology Inc. 24C02C is a 2K bit Serial Electrically Erasable PROM with a voltage range of 4.5V to 5.5V. The device is organized as a single block of 256 x 8-bit memory with a 2-wire serial interface. Low-current design permits operation with typical standby and active currents of only 10 μA and 1 mA, respectively. The device has a page write capability for up to 16 bytes of data and has fast write cycle times of only 1 ms for both byte and page writes. Functional address lines allow the connection of up to eight 24C02C devices on the same bus for up to 16K bits of contiguous EEPROM memory. The device is available in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm), 8-pin 2x3 DFN, 8-pin MSOP and TSSOP packages.

Features:

? Single-supply with operation from 4.5 to 5.5V

? Low-power CMOS technology:

- Read current 1 mA, typical

- Standby current 10 μA, typical

? 2-wire serial interface, I2C compatible

? Cascadable up to eight devices

? Schmitt Trigger inputs for noise suppression

? Output slope control to eliminate ground bounce

? 100 kHz and 400 kHz clock compatibility

? Fast Page or Byte write time 1 ms, typical

? Self-timed erase/write cycle

? 16-byte page write buffer

? Hardware write-protect for upper half of the array (80h-FFh)

? ESD protection >4,000V

? More than 1 million erase/write cycles

? Data retention >200 years

? Factory programming available

? Packages include 8-lead PDIP, SOIC, TSSOP, DFN and MSOP

? Pb-free and RoHS compliant

? Temperature ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C