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21N50C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FMH21N50ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMR21N50ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV21N50ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

IXFH21N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH21N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH21N50

HiPerFETPowerMOSFETsMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH21N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH21N50F

HiPerRFPowerMOSFETs

HiPerRFPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance

IXYS

IXYS Corporation

IXFH21N50Q

HiPerFETPowerMOSFETsMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INF
24+
220-220F
163000
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理
 詢(xún)價(jià)
INF進(jìn)口原
17+
220-220F
6200
詢(xún)價(jià)
英飛凌
24+
4796
詢(xún)價(jià)
INFINEON英飛凌
23+
TO-3P
5000
原裝正品,假一罰十
 詢(xún)價(jià)
INFINEO
18+
TO-220F
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
 詢(xún)價(jià)
INFINEON
專(zhuān)業(yè)鐵帽
TO-220
8
原裝鐵帽專(zhuān)營(yíng),代理渠道量大可訂貨
 詢(xún)價(jià)
INF
20+
220-220F
38560
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢(xún)價(jià)
INFINEON/英飛凌
2022+
8
全新原裝 貨期兩周
 詢(xún)價(jià)
INFINEON/英飛凌
2021+
TO-220
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢(xún)價(jià)
INFINEON
21+
TO220
15
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
更多21N50C供應(yīng)商 更新時(shí)間2025-2-8 14:55:00

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