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1N5818-B

1.0A SCHOTTKY BARRIER RECTIFIER

DIODES

Diodes Incorporated

1N5818-B

Guard Ring Die Construction for Transient Protection

DIODES

Diodes Incorporated

1N5818-B

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：DO-204AL，DO-41，軸向 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 30V 1A DO41

PAMDiodes Incorporated

龍鼎威

1N5818-E

SchottkyBarrierRectifiersReverseVoltage20to40VForwardCurrent1.0A

Feature&Dimensions *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardingforovervoltageprotection *Hightempera

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

1N5818FL

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

1N5818G

1AmpSchottkyRectifier

1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5818G

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5818G

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5818H

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequencyinverters,f

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

1N5818HS

SurfaceMountSchottkyBarrierRectifier

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

1N5818L

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

1N5818-LFR

1ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●EXTREMELYLOWVF ●LOWPOWERLOSS/HIGHEFFICIENCY ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LEADFREE

FRONTIER

Frontier Electronics

1N5818M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features ●HighCurrentCapability ●LowForwardVoltageDrop ●GuardRingforTransientProtection ●GlassPackageforHighReliability ●PackagedforSurfaceMountApplications

DIODES

Diodes Incorporated

1N5818M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

1N5818RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5818RL

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

1N5818RL

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5818RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5818RLG

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5818S

SCHOTTKYBARRIERRECTIFIER

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    1N5818-B

  • 制造商：

    Diodes Incorporated

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 二極管類型：

    肖特基

  • 電流 - 平均整流 (Io)：

    1A

  • 速度：

    快速恢復(fù) =< 500ns，> 200mA（Io）

  • 不同?Vr、F 時電容：

    110pF @ 4V，1MHz

  • 安裝類型：

    通孔

  • 封裝/外殼：

    DO-204AL，DO-41，軸向

  • 供應(yīng)商器件封裝：

    DO-41

  • 工作溫度 - 結(jié)：

    -65°C ~ 125°C

  • 描述：

    DIODE SCHOTTKY 30V 1A DO41

供應(yīng)商型號品牌批號封裝庫存備注價格
DID
1535+
1000
詢價
DID
23+
1000
全新原裝，歡迎來電咨詢
 詢價
Diodes Incorporated
24+
DO-41
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價
MC
22+
NA
30000
原裝現(xiàn)貨假一罰十
 詢價
TAIWAN
1809+
DO-204
16750
就找我吧!--邀您體驗愉快問購元件!
 詢價
24+
N/A
64000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
DiodesInc
23+
DO-41
7750
全新原裝優(yōu)勢
 詢價
500
公司優(yōu)勢庫存 熱賣中!!
 詢價
VISHAY/威世
wrockhoundingnet/projects/comp
resources smd pdf digikey243 p
1000
全新原裝現(xiàn)貨 樣品可售
 詢價
VISHAY/威世
23+
resources smd pdf digikey243 p
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
更多1N5818-B供應(yīng)商 更新時間2024-11-16 16:00:00

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