- IC/元器件
- PDF資料
- 商情資訊
- 絲印
1N5550US分立半導(dǎo)體產(chǎn)品的二極管-整流器-單規(guī)格書(shū)PDF中文資料

廠(chǎng)商型號(hào) |
1N5550US |
參數(shù)屬性 | 1N5550US 封裝/外殼為SQ-MELF,B;包裝為卷帶(TR);類(lèi)別為分立半導(dǎo)體產(chǎn)品的二極管-整流器-單;產(chǎn)品描述:DIODE GEN PURP 200V 3A D5B |
功能描述 | VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS |
封裝外殼 | SQ-MELF,B |
文件大小 |
93.33 Kbytes |
頁(yè)面數(shù)量 |
2 頁(yè) |
生產(chǎn)廠(chǎng)商 | Microsemi Corporation |
企業(yè)簡(jiǎn)稱(chēng) |
Microsemi【美高森美】 |
中文名稱(chēng) | 美高森美公司官網(wǎng) |
原廠(chǎng)標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-2-26 18:25:00 |
人工找貨 | 1N5550US價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
1N5550US規(guī)格書(shū)詳情
DESCRIPTION
This “standard recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/420 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 5.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting (see separate data sheet for 1N5550 thru 1N5554). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speeds.
FEATURES
? Surface mount package series equivalent to the
JEDEC registered 1N5550 to 1N5554 series
? Voidless hermetically sealed glass package
? Extremely robust construction
? Triple-layer passivation
? Internal “Category I” Metallurgical bonds
? JAN, JANTX, JANTXV, and JANS available per MIL-PRF-19500/420
? Axial-leaded equivalents also available (see separate
data sheet for 1N5550 thru 1N5554)
APPLICATIONS / BENEFITS
? Standard recovery 5 Amp rectifiers 200 to 1000 V
? Military and other high-reliability applications
? General rectifier applications including bridges, half
bridges, catch diodes, etc.
? High forward surge current capability
? Low thermal resistance
? Controlled avalanche with peak reverse power
capability
? Inherently radiation hard as described in Microsemi
MicroNote 050
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
1N5550US
- 制造商:
Microchip Technology
- 類(lèi)別:
分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單
- 包裝:
卷帶(TR)
- 二極管類(lèi)型:
標(biāo)準(zhǔn)
- 電流 - 平均整流 (Io):
3A
- 速度:
標(biāo)準(zhǔn)恢復(fù) >500ns,> 200mA(Io)
- 安裝類(lèi)型:
表面貼裝型
- 封裝/外殼:
SQ-MELF,B
- 供應(yīng)商器件封裝:
D-5B
- 工作溫度 - 結(jié):
-65°C ~ 175°C
- 描述:
DIODE GEN PURP 200V 3A D5B
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SSI |
24+ |
SMD |
18700 |
詢(xún)價(jià) | |||
GE |
23+ |
NA |
39960 |
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣 |
詢(xún)價(jià) | ||
MS |
23+ |
NA |
108 |
專(zhuān)做原裝正品,假一罰百! |
詢(xún)價(jià) | ||
N/L |
17 |
詢(xún)價(jià) | |||||
MIC微半 1N5553USE3 1N5554USE3 |
24+ |
JANTXV1N5554USe3 |
68900 |
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126 |
詢(xún)價(jià) | ||
SSI |
23+ |
二極管 |
5000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
SEMTECH |
新 |
407 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
SSI |
24+ |
NA |
2185 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢(xún)價(jià) | ||
MICROCHIP |
23+ |
7300 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | |||
MIC微半 1N5553US 1N5554US 1N55 |
23+ |
JANTXV1N5554US |
20000 |
原廠(chǎng)授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道。可提供大量庫(kù)存,詳 |
詢(xún)價(jià) |