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1N3012B

Silicon 10 WATT Zener Diodes

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N3012B

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N3012B

10 WATT ZENER DIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

1N3012B

SILICON 10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinking

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N3012B

10W ZENER DIODE 6.8 VOLTS TO 200 VOLTS 5 TOLERANCE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N3012B

Zener Diodes

NAINA

Naina Semiconductor ltd.

1N3012B

Package:DO-203AA,DO-4,接線柱;包裝:散裝 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 齊納 - 單 描述:DIODE ZENER 160V 10W DO213AA

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

1N3012BR

10 WATT ZENER DIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

1N3012C

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N3012D

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N3012R

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N3012R

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

1N3012RA

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N3012RB

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N3012RC

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N3012RD

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N3012

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N3012A

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N3012B

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N3012C

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    1N3012B

  • 制造商:

    Microchip Technology

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 齊納 - 單

  • 包裝:

    散裝

  • 容差:

    ±5%

  • 工作溫度:

    -65°C ~ 175°C

  • 安裝類型:

    底座,接線柱安裝

  • 封裝/外殼:

    DO-203AA,DO-4,接線柱

  • 供應(yīng)商器件封裝:

    DO-213AA

  • 描述:

    DIODE ZENER 160V 10W DO213AA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MICROSEMI
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8513
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MICROSEMI
2023+
80000
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MSC
24+
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2050
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Microsemi
1942+
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908
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86
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MSC
23+
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50000
全新原裝正品現(xiàn)貨,支持訂貨
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22+
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MSC
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25000
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MSC
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86
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68500
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更多1N3012B供應(yīng)商 更新時(shí)間2025-1-17 17:11:00