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10N100-FL

10A, 1000V N-CHANNEL POWER MOSFET

?DESCRIPTION TheUTC10N100-FLisahighvoltagepowerMOSFET combinesadvancedtrenchMOSFETdesignedtohavebetter characteristics,suchasfastswitchingtime,lowgatecharge,low on-stateresistanceandhighruggedavalanchecharacteristics. ThispowerMOSFETisusuallyusedinhighsp

UTCUnisonic Technologies

友順友順科技股份有限公司

10N100L-TF1-T

10A, 1000V N-CHANNEL POWER MOSFET

?DESCRIPTION TheUTC10N100-FLisahighvoltagepowerMOSFET combinesadvancedtrenchMOSFETdesignedtohavebetter characteristics,suchasfastswitchingtime,lowgatecharge,low on-stateresistanceandhighruggedavalanchecharacteristics. ThispowerMOSFETisusuallyusedinhighsp

UTCUnisonic Technologies

友順友順科技股份有限公司

10N100L-TF2-T

10A, 1000V N-CHANNEL POWER MOSFET

?DESCRIPTION TheUTC10N100-FLisahighvoltagepowerMOSFET combinesadvancedtrenchMOSFETdesignedtohavebetter characteristics,suchasfastswitchingtime,lowgatecharge,low on-stateresistanceandhighruggedavalanchecharacteristics. ThispowerMOSFETisusuallyusedinhighsp

UTCUnisonic Technologies

友順友順科技股份有限公司

10N100L-TF3-T

10A, 1000V N-CHANNEL POWER MOSFET

?DESCRIPTION TheUTC10N100-FLisahighvoltagepowerMOSFET combinesadvancedtrenchMOSFETdesignedtohavebetter characteristics,suchasfastswitchingtime,lowgatecharge,low on-stateresistanceandhighruggedavalanchecharacteristics. ThispowerMOSFETisusuallyusedinhighsp

UTCUnisonic Technologies

友順友順科技股份有限公司

10N120BN

35A, 1200V, NPT Series N-Channel IGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

10N120BN

35A, 1200V, NPT Series N-Channel IGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

10N120BND

35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

10N120BND

35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

Intersil

Intersil Corporation

10N20C

200V N-Channel MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

10N30

10A, 300V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N30isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul

UTCUnisonic Technologies

友順友順科技股份有限公司

供應商型號品牌批號封裝庫存備注價格
Qualcomm
23+
BGA
7151
專注配單,只做原裝進口現貨
 詢價
Qualcomm
23+
BGA
7151
專注配單,只做原裝進口現貨
 詢價
FAIRCHIL
23+
TO-220F
9526
詢價
FSC
23+
TO-220
30000
原裝正品,假一罰十
 詢價
進口原裝
23+
TO-220
1761
專業(yè)優(yōu)勢供應
 詢價
2020+
5000
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可
 詢價
BYD比亞迪
2010+
TO-220F
6000
絕對原裝自己現貨
 詢價
士蘭微
22+
TO-220F
998033
原裝正品現貨,可開13點稅
 詢價
FAIRCHILD
24+
TO-220
16800
絕對原裝進口現貨,假一賠十,價格優(yōu)勢!
 詢價
FSC
24+
TO-220
6430
原裝現貨/歡迎來電咨詢
 詢價
更多10N供應商 更新時間2025-2-4 15:00:00

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