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EIC1011-8

10.70-11.70GHz8-WattInternallyMatchedPowerFET

FEATURES ?10.70–11.70GHzBandwidth ?Input/OutputImpedanceMatchedto50Ohms ?+39.0dBmOutputPowerat1dBCompression ?6.0dBPowerGainat1dBCompression ?30PowerAddedEfficiency ?-46dBcIM3atPO=28.5dBmSCL ?100TestedforDC,RF,andRTH

Excelics

Excelics Semiconductor, Inc.

FLM1011-8F

X,Ku-BandInternallyMatchedFET

DESCRIPTION TheFLM1011-8FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES ?HighOutputPower

EUDYNA

Eudyna Devices Inc

NEZ1011-8E

GaAsMESFET

DESCRIPTION TheNEZ1011-8EispowerGaAsFETwhichprovideshigh gain,highefficiencyandhighoutputpowerinKu-band. Theinternalinputandoutputmatchingenablesguaranteed performancetobeachievedwithonlya50Wexternal circuit. Toreducethermalresistance,thedevicehasaPHS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NEZ1011-8E

8WX,Ku-BANDPOWERGaAsMESFET

DESCRIPTION TheNEZ1011-8EandNEZ1414-8EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50?externalcircuit.Toreducethermalresistancethedevic

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

TIM1011-8L

MICROWAVEPOWERGaAsFET

Theinformationcontainedhereinispresentedonlyasaguidefortheapplicationsofourproducts.NoresponsibilityisassumedbyTOSHIBAforanyinfringementsofpatentsorotherrightsofthethirdpartieswhichmayresultsfromitsuse,Nolicenseisgrantedbyimplicationorotherwiseunder

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TIM1011-8UL

MICROWAVEPOWERGaAsFET

FEATURES ?BROADBANDINTERNALLYMATCHEDFET ?HIGHPOWER P1dB=39.5dBmat10.7GHzto11.7GHz ?HIGHGAIN G1dB=9.0dBat10.7GHzto11.7GHz ?LOWINTERMODULATIONDISTOTION IM3=-45dBcatPout=27.0dBm SingleCarrierLevel ?HERMETICALLYSEALEDPACKAGE

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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EUDYNA
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TO-59
8510
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5000
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5000
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62000
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PHOENIX
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24+
38077
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更多1011-8F供應(yīng)商 更新時(shí)間2025-3-24 16:00:00